Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section.

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Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section.

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Consider A Silicon Wafer Positioned In A Furnace That Is Zone Heated On The Top Section And Cooled On The Lower Section 1
Consider A Silicon Wafer Positioned In A Furnace That Is Zone Heated On The Top Section And Cooled On The Lower Section 1 (19.08 KiB) Viewed 14 times
Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace. The zone temperatures are Turh = 950 K and Ture = 330 K. The emissivity and thickness of the water are e = 0.65 and d = 0.78 mm, respectively. With the ambient gas at T. = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the wafer are 8 and 4 W/m2.K. Find the steady-state temperature of the water, in K. T= K
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