9. Which of the following conditions will produce the best resolution in photolithography? (2) A. Thin positive photores

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9 Which Of The Following Conditions Will Produce The Best Resolution In Photolithography 2 A Thin Positive Photores 1 (115.03 KiB) Viewed 12 times

9. Which of the following conditions will produce the best resolution in photolithography? (2) A. Thin positive photoresist, i-line (365 nm wave length), proximity printing B. Thick negative photoresist, i-line (365 nm wave length), contact printing C. Thin positive photoresist, deep UV (254 nm wave length), contact printing D. Thin positive photoresist, deep UV (254 nm wave length), proximity printing E. Thin positive photoresist, i-line (365 nm wave length), contact printing F. Thick negative photoresist, h-line (405 nm wave length), proximity printing 10. Which of the following statements regarding wet etching is NOT correct? (2) A. Wet etching is always 100% chemical etching. B. Wet etching of glass is always isotropic etching. C. Wet etching of silicon wafers can be either isotropic or anisotropic etching. D. Wet etching of metals is always isotropic. E Chemical etching is highly selective etching and is always isotropic etching. F. Physical etching shows low selectivity and is always anisotropic. 11. Which of the following statements regarding plasma etching is NOT correct? (2) A. Plasma etching provides a better control of operational parameters than wet etching; plasma etching also eliminates the possibility of stiction problem. B. Plasma etching can produce vertical trenches with minimal undercut and thus high aspect ratio structures can be created. C. Reactive ion etching (RIE) is based on the synergistic effect between physical and chemical etching components, each contributed by positive ions and neutral radicals, respectively. D. Positive ions are the main etchant species in plasma etching and that's why it is referred to as Reactive lon Etching (RIE) 12. Which of the following etch rate curves show aspect ratio effect in plasma etching? (2) (A) (B) (C) (D) Etch depth Etch rate Etch time