4. Assume that you have spin-coated 50 um thick SU-8 on a Si wafer. The photoresist contrast and light intensity profile

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4 Assume That You Have Spin Coated 50 Um Thick Su 8 On A Si Wafer The Photoresist Contrast And Light Intensity Profile 1 (74.54 KiB) Viewed 14 times

4. Assume that you have spin-coated 50 um thick SU-8 on a Si wafer. The photoresist contrast and light intensity profiles are given below. Answer the following questions. (6) 50 pm thick SU-8 2035 spin-coated Photomask SU-8 2035, 50 um 30 Actual Normalized film thickness after development Light (i-line) intensity (mW/cm) 20 0.5 Ideal 10 5 0 Position 100 200 1000 Dose [mJ/cm) 20 pm (1) If the sample is exposed to UV light for 60 sec through the photomask as shown below, draw the cross-sectional profile of PR after development (Use the ideal intensity profile). (3) Draw here Photomask (2) If the sample is exposed to UV light for 60 sec through the photomask and the intensity profile is not ideal (use the actual intensity profile), draw the cross-sectional profile of PR after development. (3) Draw here Photomask