Question 2 An abrupt silicon P-N junction with doping concentrations of NA = 5 x 1016 cm and ND = 2.5 x 1016 cm respecti

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Question 2 An Abrupt Silicon P N Junction With Doping Concentrations Of Na 5 X 1016 Cm And Nd 2 5 X 1016 Cm Respecti 1 (41.84 KiB) Viewed 14 times

Question 2 An abrupt silicon P-N junction with doping concentrations of NA = 5 x 1016 cm and ND = 2.5 x 1016 cm respectively is biased at V = 0.8 V. Determine the ideal forward current assuming that the N-type region is much smaller than the minority carrier diffusion length with In = 1 pm and assuming a "long" P-type region, sufficiently enough for the minority carriers to diffuse in. Use Me = 1450 cm?/Vs, Mn = 500 cm?/Vs and intrinsic concentration of 1010 cm3 in your calculations. The minority carrier lifetime in P-type is given as 10 us and the height of the structure width of the structure = 100 um. Discuss what happens to the forward current when the voltage is increased even further under same temperature environment. Will the saturation current also change? (50 marks)