= = Consider a uniformly dope silicon npn bipolar transistor at T = 300 K with the following parameters: DB = 23 cm-Is,

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= = Consider a uniformly dope silicon npn bipolar transistor at T = 300 K with the following parameters: DB = 23 cm-Is,

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Consider A Uniformly Dope Silicon Npn Bipolar Transistor At T 300 K With The Following Parameters Db 23 Cm Is 1
Consider A Uniformly Dope Silicon Npn Bipolar Transistor At T 300 K With The Following Parameters Db 23 Cm Is 1 (322.88 KiB) Viewed 11 times
= = Consider a uniformly dope silicon npn bipolar transistor at T = 300 K with the following parameters: DB = 23 cm-Is, De = 8 cm²/s, Teo = 2 x 10-7S, TEO = 8 X 10-8 s, NB = 2 X 1016 cm, and xe = 0.35 um. The recombination factor has been determined to be 8 = 0.9975. The required common-emitter current gain is B = 150. A minimum neutral base width of xp = 0.80 um can be fabricated. (a) Determine an appropriate neutral base width and the minimum emitter doping concentration, Ne, to meet this specification. (b) Using the results of part (a), what are the values of at and y?
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