Resistivity, p is an important material parameter that is closely related to carrier drift. Figure 2 shows room temperat

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Resistivity P Is An Important Material Parameter That Is Closely Related To Carrier Drift Figure 2 Shows Room Temperat 1 (48.62 KiB) Viewed 34 times

Resistivity, p is an important material parameter that is closely related to carrier drift. Figure 2 shows room temperature carrier mobilities as a function of the dopant concentration in silicon, Si. Determine the intrinsic resistivity of Si at 300 K with charge, q = 1.60 x 10- Cand the maximum possible resistivity Silicon T= 300 K Electrons 1000 Holes HOP Mp (cm/V-sec) 100 NA or Np (cm) 1x 1014 2 5 1x 1015 2 $ 1x 10 2 5 Ix 101 (cm / V-sec) 1358 461 1357 460 1352 459 1345 458 1332 455 1298 448 1248 437 419 986 378 801 331 1165 10 1014 1015 1016 1017 NA or Np (cm) 1018 np = n? PE n n}_NA-N, 2 + [ⓇNO) 1 P q(unn + ump) 1 Pmax 29/P,