Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2

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Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2

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Find The Donor And Acceptor Doping Concentrations To Design The Silicon P N Diode So That In 25a Cm2 And Jp 7a Cm2 1
Find The Donor And Acceptor Doping Concentrations To Design The Silicon P N Diode So That In 25a Cm2 And Jp 7a Cm2 1 (108.12 KiB) Viewed 14 times
Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2 at Vbi = 0.7V. The remaining parameters are given below. n; = 9.65x10 cm- , Do =21cm²/s, De = 10cm?/s, tpo = Tpo = 5x107s. DnDp = = - = ° -3 2 -
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