- 3 Find The Donor And Acceptor Doping Concentrations To Design The Silicon P N Diode So That In 25a Cm2 And Jp 7a C 1 (39.3 KiB) Viewed 21 times
3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /c
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3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /c
3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2 at Vbi = 0.7V. The remaining parameters are given below. n; = 9.65x10° cm, D, =21cm²/s, Do = 10cm²/s, tpo = tpo = 5x10-?s. -3 = P
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