3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /c

Business, Finance, Economics, Accounting, Operations Management, Computer Science, Electrical Engineering, Mechanical Engineering, Civil Engineering, Chemical Engineering, Algebra, Precalculus, Statistics and Probabilty, Advanced Math, Physics, Chemistry, Biology, Nursing, Psychology, Certifications, Tests, Prep, and more.
Post Reply
answerhappygod
Site Admin
Posts: 899603
Joined: Mon Aug 02, 2021 8:13 am

3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /c

Post by answerhappygod »

3 Find The Donor And Acceptor Doping Concentrations To Design The Silicon P N Diode So That In 25a Cm2 And Jp 7a C 1
3 Find The Donor And Acceptor Doping Concentrations To Design The Silicon P N Diode So That In 25a Cm2 And Jp 7a C 1 (39.3 KiB) Viewed 10 times
3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2 at Vbi = 0.7V. The remaining parameters are given below. n; = 9.65x10° cm, D, =21cm²/s, Do = 10cm²/s, tpo = tpo = 5x10-?s. -3 = P
Join a community of subject matter experts. Register for FREE to view solutions, replies, and use search function. Request answer by replying!
Top
Post Reply

Return to “Archived Questions & Answers”