In a PIN photodiode with instrinsic region width W= 10 um. Assume that the flex is 10 17 cm's' and the absorption coeffi
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In a PIN photodiode with instrinsic region width W= 10 um. Assume that the flex is 10 17 cm's' and the absorption coeffi
In a PIN photodiode with instrinsic region width W= 10 um. Assume that the flex is 10 17 cm's' and the absorption coefficient is a = 10 cm (a) Calculate the photon current density of this PIN photodiode. (b) Determine the instrinc width for which 80% of the maximum possible photon current is generated. (c) Design this Silicon “PIN” diode to have bandwidth of 10 GHz by determining the required applied voltage. Assume that electron mobility Hn = 1,500 cm.s
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