will definitely downvote for copied solution
(1) Consider a GaAs photoconductor at T=300 °K with the following parameters: No=0 Na= 5 x 1016 cm Ho = 250 cm-/V-S Ho = 8000 cm?/V-s po = 10-s Ino = 10-75 A= 104 cm? L = 100 um Assum that a voltage of 5 V is applied and assume that excess electrons and holes are uniformly generated at a rate of G = 10 21 cm's!. Calculate (a) the steady-state excess carrier concentration and the photoconductivity (b) the steady-state photocurrent and © the photoconductor gain (d) Compare the gains if the length of this photoconductor is reduced to 25 um.
(1) Consider a GaAs photoconductor at T=300 °K with the following parameters: No=0 Na= 5 x 1016 cm Ho = 250 cm-/V-S Ho =
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(1) Consider a GaAs photoconductor at T=300 °K with the following parameters: No=0 Na= 5 x 1016 cm Ho = 250 cm-/V-S Ho =
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