(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm-'s-1 and the abs
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(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm-'s-1 and the abs
(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm-'s-1 and the absorption coefficient is a = 109 cm! (a) Calculate the photon current density of this PIN photodiode. (b) Determine the instrinc width for which 80% of the maximum possible photon current is generated. (c) Design this Silicon “PIN” diode to have bandwidth of 10 GHz by determining the required applied voltage. Assume that electron mobility un 1,500 cm /V.s