(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm*s-2 and the abso

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(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm*s-2 and the abso

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3 In A Pin Photodiode With Instrinsic Region Width W 10 Um Assume That The Photon Flex Is 10 17 Cm S 2 And The Abso 1
3 In A Pin Photodiode With Instrinsic Region Width W 10 Um Assume That The Photon Flex Is 10 17 Cm S 2 And The Abso 1 (51.1 KiB) Viewed 10 times
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wil definitely downvote for copied solution
(3) In a PIN photodiode with instrinsic region width W = 10 um. Assume that the photon flex is 10 17 cm*s-2 and the absorption coefficient is a= 103 cm! (a) Calculate the photon current density of this PIN photodiode. (b) Determine the instrinc width for which 80% of the maximum possible photon current is generated. (c) Design this Silicon “PIN” diode to have bandwidth of 10 GHz by determining the required applied voltage. Assume that electron mobility Mn = 1,500 cm.s
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