A silicon bar 1 um and 100 um? in cross-sectional area is doped such that the Fermi level is 200 meV below the conductio

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A silicon bar 1 um and 100 um? in cross-sectional area is doped such that the Fermi level is 200 meV below the conductio

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A Silicon Bar 1 Um And 100 Um In Cross Sectional Area Is Doped Such That The Fermi Level Is 200 Mev Below The Conductio 1
A Silicon Bar 1 Um And 100 Um In Cross Sectional Area Is Doped Such That The Fermi Level Is 200 Mev Below The Conductio 1 (34.32 KiB) Viewed 11 times
A silicon bar 1 um and 100 um? in cross-sectional area is doped such that the Fermi level is 200 meV below the conduction band edge at equilibrium and has a majority carrier diffusion coefficient of 20.6 cm-/s. An 8 mV bias is applied to the silicon bar at 300 K. а (a) Calculate the Hall coefficient and sign associated with the majority carriers. (12 pts)
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