A sample of Gallium Arsenic (GaAs) at a specific temperature is doped with Boron with a concentration of 1015 cm-3 . By

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A sample of Gallium Arsenic (GaAs) at a specific temperature is doped with Boron with a concentration of 1015 cm-3 . By

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A sample of Gallium Arsenic (GaAs) at a specific temperature is doped with Boron
with a concentration of 1015 cm-3
. By taking any value of temperature within the
range of 300 K < T < 900 K, determine the concentration and type of impurity
atoms to be added to move the Fermi level so that it is 0.50 eV below the intrinsic
level.
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