( ni=1×10^10 cm-3 in Silicon, 𝜓𝑏𝑖 = Vbi ) Calculate the theoretical barrier (Schottky height, bu

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( ni=1×10^10 cm-3 in Silicon, 𝜓𝑏𝑖 = Vbi )
Calculate the theoretical barrier (Schottky
height, built in potential barrier,
and
maximum electric field in a metal
semiconductor diode for zero applied bias. Plus, draw
the
engery band diagram before forming contact and after
contact. Consider a contact between
tungsten and n type silicon doped to Nd = 10^15 cm-3 at T=300K.
((∅𝑚=4.55𝑉 in tungsten, 𝜒 = 4.05V in silicon.)