Id(mA) Vss=+8 V 10 9 8 Vos=+7V Vas=+6 V Ves=+5 V Vas=+4V Ves=+3 V Ves=+2 v 5 10 15 20 25 Vos (V) Figure-1 Q.1. Drain cha

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Id Ma Vss 8 V 10 9 8 Vos 7v Vas 6 V Ves 5 V Vas 4v Ves 3 V Ves 2 V 5 10 15 20 25 Vos V Figure 1 Q 1 Drain Cha 1 (311.58 KiB) Viewed 41 times

Id(mA) Vss=+8 V 10 9 8 Vos=+7V Vas=+6 V Ves=+5 V Vas=+4V Ves=+3 V Ves=+2 v 5 10 15 20 25 Vos (V) Figure-1 Q.1. Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having this characteristics, b) Sketch the transfer characteristics directly from the drain characteristics, c) What can be possible cut-off for VGs and saturation value for Ifrom the drain GS characteristics, d) Calculate and sketch the transfer characteristics by using Shockley's equation, e) Compare the results in (c) and (d). Is there any difference between the transfer characteristics in (c) and (d) f) Calculate and plot a loadline g) Define a point from your calculations, h) Define Ibo and V values from the transfer characteristic curve and loadline DO GSQ i) Design and plot a proper voltage divider biasing circuit from your calculations above, j) Calculate and define all the required periph Start uponents values and source voltage for your biasing circuit design.