-3 The doping concentrations of p-n junction are Na 5x1016 cm' and Nd 1.5x1016 cm?, and the minority carrier lifetimes a

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3 The Doping Concentrations Of P N Junction Are Na 5x1016 Cm And Nd 1 5x1016 Cm And The Minority Carrier Lifetimes A 1 (254.46 KiB) Viewed 49 times

-3 The doping concentrations of p-n junction are Na 5x1016 cm' and Nd 1.5x1016 cm?, and the minority carrier lifetimes are tno = 2 x 10-7 s and tho = 8x 108. The electron mobility is 965 cm°/V-s and the holes mobility is 386 cm?/V-s and The cross sectional area is A = 5x 104 cm². Calculate (a) the ' ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x = X, for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = Xn for Va= 0.8 Vbi-, and (e) the electron current at x = xy + (1/2) Lp (diffusion length) for Va = 0.8 Vbi. р