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السا 3. (a) The parameters of the transistor in Figure Q3(a) are: VEB = 0.65 V and B = 80. 15 V 10 kΩ 400 ks 150 κας 5 k
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السا 3. (a) The parameters of the transistor in Figure Q3(a) are: VEB = 0.65 V and B = 80. 15 V 10 kΩ 400 ks 150 κας 5 k
السا 3. (a) The parameters of the transistor in Figure Q3(a) are: VEB = 0.65 V and B = 80. 15 V 10 kΩ 400 ks 150 κας 5 ko i) Figure Q3(a) Calculate the base, emitter and collector currents and voltages. [14 marks] Calculate the power dissipated in the transistor. [2 marks] ii) iii) Prove that the transistor is operating in forward-active mode. [2 marks] ORDENTIAL (b) State the required region of operation for a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) in order to operate as an amplifier. [2 marks]
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