One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) in
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One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) in
One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) into crystalline silicon to make an n-type semiconductor. This P-doped layer needs to be at least 0.5 um into the 250-um thick wafer. The maximum solubility of phosphorous within crystalline silicon is 1.0 x 1021 P atoms/cm3. Initially, there is no phosphorous impurity in the crystalline silicon. Using the coefficients in Table 24.7, calculate the temperature required for this system to reach a concentration of P atoms of 1.5 x 1020 cm-3 at a depth of 0.5 um after 30 min of exposure.
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