Gas inlet Al-Cu-Si BPSG Sio p P-type substrate Power supply Target Waters N-well Figure P2 Substrate Vacuum pump Figure

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Gas Inlet Al Cu Si Bpsg Sio P P Type Substrate Power Supply Target Waters N Well Figure P2 Substrate Vacuum Pump Figure 1 (50.15 KiB) Viewed 35 times

Gas inlet Al-Cu-Si BPSG Sio p P-type substrate Power supply Target Waters N-well Figure P2 Substrate Vacuum pump Figure P3. 3. Figure P2 shows a simple parallel-plate sputtering system used to sputter platinum (Pt). The target is a 300 mm diameter Pt disc sitting in the center of a 400 mm diameter chamber. The chamber height is 200 mm. The chamber itself serves as the second electrode and is grounded. The chamber pressure is 10 mTorr. (a) If the plasma is at +0.2V what is the de voltage on the target. (b) Attached to the substrate on the bottom of the chamber, facing the target, is a single 300 mm wafer. Assume the gas in the chamber is argon, that 0.01% is ionized, and that 50% of the Pt ejected from the target reaches the wafers. The plasma power is increased enough to obtain 0.5V between the plasma and the grounded chamber. Find the deposition rate if the system is at 280°C and the ions do not suffer any inelastic collisions as they cross the dark space. Material properties: Ar atomic mass is 40 u. Pt atomic mass is 195 u. Pt density is 2150 kg/m².