Electron filament Temperature (0) 900 800 1300 1200 1100 1000 200 600 1.0 llllllllllll Are 15 o SiH Siha A SHO OSCH Ar 0

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Electron Filament Temperature 0 900 800 1300 1200 1100 1000 200 600 1 0 Llllllllllll Are 15 O Sih Siha A Sho Osch Ar 0 1 (37.16 KiB) Viewed 57 times

Electron filament Temperature (0) 900 800 1300 1200 1100 1000 200 600 1.0 llllllllllll Are 15 o SiH Siha A SHO OSCH Ar 0.2 Ar Ar gas injection Chamber Growth rate (m/min) 0.1 0.05 0.02 Collector plate 0.01 فقم WI -- 0.7 0.8 0.9 1.0 Temperature. 1000/T (K) Figure P4. Figure P5. 5. Figure P5 shows silicon vapor phase epitaxial growth rate as a function of temperature for four different sources at a gas flow of 100 sccm. A process engineer is using SiHCl; as the deposition source. He sets the temperature at 1150°C, and gas flow at 100 sccm. (a) Determine the deposition regime under the above stated condition. (b) Determine the deposition rate if the gas flow is changed to 200 sccm. (c) Find the activation energy in the reaction rate limited regime.