please solve quickly will upvote
A metal-silicon junction is biased so that the potential drop Aọ, in the Si is 0.50 V. The doping is No = 4.0x101 cm ?. Calculate the depletion-layer width w.. AP EC EF Ey wn
E (Si) = 1.12 eV n (Si) = 1.0x100 cm 1 um = 104 cm KT = 0.0259 eV KT/9 = 0.0259 V 1 nm = 10 cm Ks (Si) = 11.8 Ko (SiO2) = 3.9
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