Note: solve part (b) and part (c), please. Don't copy solution from other experts. SN=1

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Note: solve part (b) and part (c), please. Don't copy
solution from other experts.
SN=1

Note Solve Part B And Part C Please Don T Copy Solution From Other Experts Sn 1 1 (121.64 KiB) Viewed 37 times

64 Part2 [CLO 3, CLO 4, CLO 5] Designing Biasing Circuits for Discrete Amplifies a. Using the bias scheme design tips, and assuming Vcc = 9 V, VBE(on)= 0.7 V and a ß of 120 in the circuit of Fig. 9.10, specify E96 standard resistors (Appendix F) to bias the BJT at le = SN mA, where SN is your serial number in your section. b. Using the bias scheme design tips, and assuming Vpp = 15 V, V,= 1.6 V and a kn’W/L of 0.17 A/V2 in the circuit of Fig. 9.11, specify E96 standard resistors (Appendix F) to bias the MOSFET at lp = SN mA and Iri = lr2 = SN ÞA, where SN is your serial number in your section. c. Verify your design in part (b) using LTspice. In your simulation, change the default NMOS to 2N7002. You need to include the circuit's schematic and the simulation results of your design in your assignment submission. To do that in LTspice, click on Tools >> Copy bitmap to Clipboard. Then paste the copied image in your Word document. RC R1 R VCC R C Дв Q1 BCW60A E RE R R2 R .op Figure 9.10 A single supply biasing of a BJT amplifier circuit. RD R1 R VDD R D 15 M1 K G 2N7002 R2 R s RS R .op Figure 9.11 A single supply biasing of a MOSFET amplifier circuit.

DISCRETE AMPLIFIERS BIAS SCHEMES DESIGN TIPS A) Discrete Common Source Amplifier Biasing Scheme If the common-source configuration is to be utilized in an amplifier circuit, a proper bias scheme to ensure a stable operating point in the saturation mode should be used. A classical discrete-circuit bias arrangement for the MOSFET is shown in Fig. 9.4a. It is the most commonly used scheme if a single power supply is available to the designer. It utilizes a voltage divider between two resistors, Rịand R2, to establish an appropriate voltage at the gate to put the transistor in the saturation mode. It is highly desirable to select the values of the bias resistors in such a way to make the operating point Q (IpQ, Vpso) not strongly dependent on Vi and kn’W/L, which vary with temperature and across samples of a given transistor type. Starting off with a known value of kn’W/L and Vt, and for a given Ip (based on power budget) and a given Iri = IR2 (preferably in the uA range), a proposed sizing scheme of the resistors goes like this: Start with VRD = Vps = Vs = (1/3) > Vpp = calculate Rs from Ohm's law. Select Rp= Rs (note: Is= ID). Calculate Vov = . 2xID = Calculate Vos = V++ Vov Calculate VG= VGS + Vs • Using the specified value of Ir2 = Iri and Vo, calculate Rę from Ohm's law (note: Vacross R2) = VC). • Using the specified value of Irı = IR2 and VG, calculate Ry from Ohm's law (note: Vacross Ri] = VpD - VC). Use Appendix F to find the nearest standard resistors to those you have calculated.

B) Discrete Common Emitter Amplifier Biasing Scheme If the common-emitter configuration is to be utilized in an amplifier circuit, a proper bias scheme to ensure a stable operating point in the active mode should be used. A classical discrete-circuit bias arrangement for the BJT is shown in Fig. 9.4b. It is the most commonly used scheme if a single power supply is available to the designer. It utilizes a voltage divider between two resistors, R, and R2, to establish an appropriate voltage at the base to put the transistor in the active mode. We shall use such a biasing scheme to implement a common- emitter amplifier in experiment (10). It is highly desirable to select the values of the bias resistors in such a way to make the operating point Q (Ico, Vceg) not strongly dependent on Vbe and B, which vary with temperature and across samples of a given transistor manufacturer. Starting off with a VBE(on) of 0.7 V and a known value of B, and for a given le (based on power budget), a proposed sizing scheme of the resistors goes like this: Start with Vrc = VCE = VE = (1/3) Vcc=calculate Rę from Ohm's law. • Select Rc = RE (note: for large p, Ic – I£). • Calculate VB = VBE(on) + Ve and 1b = 1/(B+1) Take 12 to be at least 1018 = calculate R2 from Ohm's law (note: Vacross R2) = Vb). Given that I = 18 + 12 = 11 lb, calculate R, from Ohm's law (note: Vacross Ri] = Vcc - Vb). Use Appendix F to find the nearest standard resistors to those you have calculated. VOD VCC RI Ro R Rc C G Нқ B E R2 'Rs RE (a) (b) Figure 9.4 Classical discrete amplifiers bias arrangements.