2 13 Assume An N P Silicon Pv Cell With A Total Thickness Of 300um Relative Permittivity Of 11 8 And An Are 1 (258.74 KiB) Viewed 55 times
= = = , 2. (13) Assume an n+p silicon PV cell with a total thickness of 300um, relative permittivity of 11.8, and an area of 50 cm2 has the following properties: No = 1.5X1020/cm3; Na= 2.5X1015/cm3; ni = 101°/cm2; în = 22us; Tp = 2us; Dp = 2.5 cm2/s; Dn = 37 cm2/s; an ideality factor of 1.2, and T = 300K. a. Grad only (5) If the diffusion length for electrons is equal to Wp, what value of the back surface field velocity is needed to make the contribution to loan for the short base diode equal to the loin value for the wide base diode? b. (6,4) If it is now assumed that Wp and Wn are long enough so that neither the front surface or back surface velocities affect the reverse saturation current, determine the electron-hole pair generation rate that is required to achieve a short circuit current of 0.65A.
C. (4,2) Again assuming that that Wp and Wn are long enough so that neither the front surface or back surface velocities affect the reverse saturation current, compute the reverse saturation current. d. (3,2) Compute the open circuit voltage for the conditions of parts b. and c.
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