(d) A different metal is evaporated onto the other side of the p-type GaAs sample described in Q6(c), forming a Schottky

[answerhappygod]

D A Different Metal Is Evaporated Onto The Other Side Of The P Type Gaas Sample Described In Q6 C Forming A Schottky 1 (58.66 KiB) Viewed 39 times

(d) A different metal is evaporated onto the other side of the p-type GaAs sample described in Q6(c), forming a Schottky contact with a barrier height of 0.7 eV. An engineer wishes to use the resulting Schottky diode in an application where a breakdown voltage of at least 100 V is required. (i) Sketch the lineup of the metal and semiconductor bands across the Schottky contact at zero bias. [6 marks] (ii) Calculate the diode depletion region thickness at a reverse bias of 100 V. [6 marks] (iii) The breakdown field for GaAs is 4x10? Vm 1. Showing clearly your working and any assumptions made, state whether the fabricated Schottky diode is likely to be suitable for the application. [4 marks]