- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 1 (53.77 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 2 (37.94 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 3 (49.88 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 4 (34.45 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 5 (44.8 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 6 (46.77 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 7 (47.8 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 8 (31.81 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 9 (50.52 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 10 (42.15 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 11 (34.71 KiB) Viewed 66 times
- Q 1 6x10 19 Coul Esi 11 7x8 85x10 14 F Cm2 Eox 3 9x8 85x10 14 F Cm2 Mass Of Electron In Si 3 0x10 31 Kg Kt Q 0259v 12 (59.13 KiB) Viewed 66 times
II. (10 total pts) The PN junction of II has a structure given by the following the P doping 1016cm N doping 1018cm-?, Wp =2x104cm Wx=100x104cm Xno=.0032x104cm, Xpo=.32x10-4 cm 1016 1018 2x10-4cm 100x10-4cm
a. (2pts) Sketch the charge distribution р Wp WN b. (2pts) Sketch the electric field diagram Efield Wp WN c. (2pts) What is the built in potential for the junction Vbi
C. (2pts) What is the built in potential for the junction Vbi d. (2pts) Calculate the maximum value of electric field in the device. At what value of x does it occur e. (5pts) Sketch the potential diagram V Wp WN
III. (10pts) Consider the circuit shown below. A small AC signal with magnitude 2.5mVpp (AC coupled) is applied to the series circuit consisting of a 300-ohm resistor in series with a diode. A DC current source (IBias) produces a DC voltage Vp across diode. The saturation current I, of the diode is a 10-9 amp. The frequency of the AC signal is low enough so that the diffusion capacitance and the drift capacitance have impedances greater than 1 mega ohm. What is the value of the (DC) diode voltage that will result in the AC signal V. being of the AC input signal. out Bias v.cos(wt) R=3002 HE Von VO
IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is N=1x106cm. The oxide thickness tox= 1x104cm. The gate is a metal and the gate metal potential is ØM = 1V VGB=0 (the device is in equilibrium) VGB Gate SiO2 P-Si Doping: N -tox 0 X do х a) (2pts) What is the potential O, for x>Xd0 b) (2pts) What is the electric field at x®X80 c) (2pts) Write the electric field at x=0* (in the semiconductor) as a function of Xao. Na and Est
d) (2pts) Write the potential at x=0* (in the semiconductor)as a function of Op Xdo, Na and Est e) (2pts) Write the electric field at x=0- (in the oxide) as a function of Xdo. Na and Eox f) (2pts) Write the potential Ømas a function of Op, Xdo, NĄ, Est, Cox, Eoxand tox g) (2pts) Use this expression to find a numerical value of Xdo a For these questions VGB 70 h) (2pts) Calculate the flatband voltage. i) (2pts) Write the applied voltage as a function of the flatland voltage Op , NA, Еsi, and Cox
j) (2pts) Calculate the threshold voltage VTH V. (15 total pts) Explain in one or two sentence what the following mean for a n-MOS transistor a) (4pts) Linear region b) (4pts) Saturation region c) (4pts) Pinch off condition
d) (3 pts) Cut off region VI. (10 pts) Briefly describe how a BJT works and give two important differences between a n-MOS transistor and a BJT transistor VII. (25 total pts) Consider the simple n-Mos transistor circuit shown below. The transistor has the measured 1-V curves indicated below. The threshold voltage Vin is 2.5V. Suppose that Vin consists of a DC bias voltage and a small ac voltage. If Vpp is 10V. a. (2pts) Draw the load line for the circuit (Use the graph) b. (2pts) What is Vps sat when Vin +5V (input voltage DC) c. (3pts) What is the output voltage when V... =5V (input voltage DC) d. (3pts) What region is the transistor operating in when V.=5V input voltage DC)?
e. (3pts) What is the output voltage when Vin=10V (input voltage DC) f. (3pts) What region is the transistor operating in when Vin=10V (input voltage DC) g. (3pts) What is the transconductance of the transistor? (use graph) h. (3pts) If you assume = 1 A/V2 What is the output conductance for Vin=5V i. (3pts) Suppose a small AC voltage of amplitude 1Vpp is added to the input voltage of 5V
What is the output AC voltage and the small signal voltage gain? Voo=10V R=1002 Vout Vin
Vop=10V R=1022 → Vout Vio 2.0 beb 1.8 -TA-25°C 16 Vas = 10V 9V 1.4 2 8V ID DRAIN CURRENT AMPS) 1.0 7V 0.8 0.6 0.4 02 6V 5V 4V 3V 1.0 20 3.0 40 5.0 6.0 70 80 9.0 Vos, DRAIN SOURCE VOLTAGE (VOLTS) 0 0