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50 Ω 20 μΗ 10 nF + vs(t) is) 0.1 ist) 40 μΗ 80 } v.t) w - vo(t) = 4 cos(10%t +30°) V Figure 3 Z 20 μΗ Zo 5012 10 nF HE v
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50 Ω 20 μΗ 10 nF + vs(t) is) 0.1 ist) 40 μΗ 80 } v.t) w - vo(t) = 4 cos(10%t +30°) V Figure 3 Z 20 μΗ Zo 5012 10 nF HE v
50 Ω 20 μΗ 10 nF + vs(t) is) 0.1 ist) 40 μΗ 80 } v.t) w - vo(t) = 4 cos(10%t +30°) V Figure 3 Z 20 μΗ Zo 5012 10 nF HE vs(1) is(t) 0.1 (1) 40 H 80 Ω v.lt) vy(t) = 4 cos(106t +30°) V Figure 4 4. (13 marks) Calculate the maximum average power available to the 800 resistor in Fig. 3, as follows: a. Calculate and draw the frequency domain Thévenin equivalent circuit seen by the 800 resistor. (6 marks) b. If the 800 resistor is replaced by a new impedance 2that would totally absorb the maximum available average power, find the value of Z. (1 mark) C. Calculate the values of physical components to make this 2 in the laboratory (resistor, capacitor or inductor values). Draw its circuit diagram. (2 marks) d. Calculate the maximum available average power from the Thévenin equivalent circuit. (2 marks) e. Calculate the complex power delivered to Z. (2 marks)
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