a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge. Si and GaAs. (Why is n highest for

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A Explain Qualitatively The Differences In Intrinsic Carrier Concentrations For Ge Si And Gaas Why Is N Highest For 1 (123.46 KiB) Viewed 21 times

a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge. Si and GaAs. (Why is n highest for Ge? Why is it lowest for GaAse) b) Explain qualitatively why n increases with increasing temperature. 1500 1000 500 T("C) 200 100 27 1019 List of band gaps of semiconductor materials. 1018 Band Group Material Symbol @ 302 IV с 5.5 1017 IV Diamond Silicon Germanium Si 1.11 0.67 Ge IV Ge 1016 11-V Gallium(III) nitride GaN 3.4 HI-V 2.26 Gallium(III) phosphide Gap 1015 III-V GaAs 1.43 Si 1014 IV-V IV-VI Gallium(III) arsenide Silicon nitride Lead(II) sulfide Silicon dioxide Copper(l) oxide SIN Pbs sio Cu,o 5 0.37 9 IV-VI 1013 2.1 Intrinsic carrier density (cm) 1012 1011 1010 GaAs 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K)