Take the following MOS structure with a n+-polySi gate (work
function equals to the Si’s electron affinity 4.04 eV). The oxide
is SiO2 with a dielectric constant of 3.9.
(a) [5 points] Calculate the flatband voltage.
(b) [5 points] Calculate the extend of the depletion region in the
semiconductor at threshold.
(c) [5 points] Calculate the electric field in the oxide at
threshold.
(d) [5 points] Calculate the inversion layer sheet charge when the
electric field in the oxide is 10^6 V/cm.
(e) [5 points] Calculate the accumulation layer sheet charge when
the electric field in the oxide is -10^6 V/cm.
Take The Following Mos Structure With A N Polysi Gate Work Function Equals To The Si S Electron Affinity 4 04 Ev The 1 (52.38 KiB) Viewed 15 times
VGB (+| nt polySi (WM=Xsi) Oxide p-Si (NA = 1017 cm -3) = Contact + - Xox 0 х
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