The atmosphere in a processing furnace for silicon-integrated circuit boards has a measured ratio CO/CO2 of 105. What te

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The Atmosphere In A Processing Furnace For Silicon Integrated Circuit Boards Has A Measured Ratio Co Co2 Of 105 What Te 1 (64.08 KiB) Viewed 26 times

The Atmosphere In A Processing Furnace For Silicon Integrated Circuit Boards Has A Measured Ratio Co Co2 Of 105 What Te 2 (55.22 KiB) Viewed 26 times

The atmosphere in a processing furnace for silicon-integrated circuit boards has a measured ratio CO/CO2 of 105. What temperature conditions must be maintained in the furnace to prevent decomposition of the SiO2 insulating layers previously formed on the boards Hy/H2O RATIO 10° 10 10 10+ 10 CO/CO2 RATIO 10-14 10-2 10 10 10 10% 10% 10% 777 10 10 103 0. 0 7102 10-1 10-2 -102 6F600,- 2F00,0 -100 M 7101 M M -1011 100 104 11 200 4Cu +0,- 200,0 2N1 +0,- 2NO 100 10 300 4F6,0 +0,870,0 2000 - 2000 M 1100 10 M *2H, +0,- 24,07 2Fe +0,- 2F00 M 2000, 200, C+0,-CO, 10 -400 20+0,- 200 10-10 102 M 10 -500 10-12 10 M M 1104 AG = RT in PO2 (cilojoules) -600 M M 10-14 100 10 Cr +0.00 2M 0,- 2MO Y10-16 -700 10/10 Si+O, SIO TO, TO Y10-18 800 4107 10 1100 -900 10 10 M 10-> 0 - ALDA
-300 Ares M 105 10 200+ 0, T 102 2Fe + Oy = 2FeO M C+0,-CO, -400 10-10 102 2C+0,- 200 M 10 10-12 Н. -500 10 M M 10 С M 10-14 M AG = AT in Poz (kilojoules) -600 1105 710 ft +0,0,0. 2Mn +0,- 2Mno 10-10 -- 700 1007109 4 10-18 SI+,- SIO Ti + 0 = TIO --800 107 4105 10-20 --900 108 110 10-22 M Al+ , ALO. 10 10 -1000 10-24 10 - 1100 70-100 2Mg+ 0,2MgOM 2Ca+ O, -2Cao M melting point B boiling point M melting point of oxide 10 10 100 -1200 10-07102 1011 0 200 400 600 800 1000 1200 1400 1600 TEMPERATURE ("C) 10-10 10-49 100 1000 CO/CO, RATIO Poz (atm) 10 10 10-0 10% st 101 H/H20 RATIO 100 O 800°C O 1400°c O 400°C O 1200°C