At a p-n junction there is a built-in contact potential
(arising from band bending). Evaluate this built-in voltage for
silicon, germanium, and GaAs. Assume equal
concentration of dopants
for n- and p-type regions;
1023 m-3. Assume also T=300K. Explain in
words what would happen to the contact potential as the temperature
of the sample is decreased to 1K and also when it is
increased to 1000K.
At a p-n junction there is a built-in contact potential (arising from band bending). Evaluate this built-in voltage for
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At a p-n junction there is a built-in contact potential (arising from band bending). Evaluate this built-in voltage for
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