-3 Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 × 10¹6 cm at 300K. Light is illuminating the left s

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3 Consider A Bar Of A P Type Si That Is Uniformly Doped With N 2 10 6 Cm At 300k Light Is Illuminating The Left S 1 (55.52 KiB) Viewed 26 times

-3 Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 × 10¹6 cm at 300K. Light is illuminating the left side of the material as shown in the figure below. Light p type x=0 The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm- following material properties: n = 1200 cm² /Vs, p = 400 cm² /Vs, Tno = far inside the semiconductor the excess electrons will go (order of magnitude)? 10-6S, Tp0 Assume the = 5 x 10-7 s. How O 10 cm O 0.1 cm O 0.001 cm O 1 cm