50 Ω W 20 με is(t) vs(t) v (t) = 4 cos(106t+30°) V Zs 50 Ω 20 μΗ ww 10 nF 0.1 i(t) Figure 3 40 μΗ 10 nF HH 0.1 i(t) 80 Ω

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50 Ω W 20 με is(t) vs(t) v (t) = 4 cos(106t+30°) V Zs 50 Ω 20 μΗ ww 10 nF 0.1 i(t) Figure 3 40 μΗ 10 nF HH 0.1 i(t) 80 Ω ' + v (t) Zp + vs(t) is(t) 40 μΗ 80 Ω vo (t) vs (t) = 4 cos(10°t +30°) V Figure 4 4. (13 marks) Calculate the maximum average power available to the 800 resistor in Fig. 3, as follows: a. Calculate and draw the frequency domain Thévenin equivalent circuit seen by the 800 resistor. (6 marks) b. If the 800 resistor is replaced by a new impedance Z₁ that would totally absorb the maximum available average power, find the value of Z₁. (1 mark) c. Calculate the values of physical components to make this Z₁ in the laboratory (resistor, capacitor or inductor values). Draw its circuit diagram. (2 marks) d. Calculate the maximum available average power from the Thévenin equivalent circuit. (2 marks) e. Calculate the complex power delivered to Z₁. (2 marks)