Figure 2 - Collected excess carrier pulse versus time arriving at contact C We will not calculate the diffusion constant

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Figure 2 - Collected excess carrier pulse versus time arriving at contact C We will not calculate the diffusion constant

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Figure 2 Collected Excess Carrier Pulse Versus Time Arriving At Contact C We Will Not Calculate The Diffusion Constant 1
Figure 2 Collected Excess Carrier Pulse Versus Time Arriving At Contact C We Will Not Calculate The Diffusion Constant 1 (135.96 KiB) Viewed 41 times
Figure 2 - Collected excess carrier pulse versus time arriving at contact C We will not calculate the diffusion constant in this assignment. [If you wish to do this calculation for marks then you need to fail this course this year as it will be assessed next year.] The area, A under the curve (Figure 2) is proportional to the number of excess electrons that have not recombined with majority carrier holes; and it is also a function t, with a general form, A(t) = Age Tno, (5) where Tho is the recombination life of minority electrons. By plotting In (A/Ao) vs. t the recombination rate, Tno, can be determined. Question 7: Based on Equation 5, determine an equation for the area under the curve as a function of the sweep electric field (Es). [3] By varying the sweep electric field, Es, the area under the curve will change. Experiment A Haynes-Shockley experiment, with a setup shown in Figure 1, was performed on a p-type Germanium sample of length (L = 3.59 cm). Contacts E and C were set to a distance of d = 0.8 cm. Four voltage sweeps (Vs) were set 21.2 V, 32.1 V, 42.7 V and 50 V. The below graph shows the pulse arrivals for the applied sweep voltages. Type here to search ] --
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