2. The measured depletion capacitance of a p-n silicon junction (formed in an n-type epitaxial layer) is shown. The devi

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2. The measured depletion capacitance of a p-n silicon junction (formed in an n-type epitaxial layer) is shown. The devi

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2 The Measured Depletion Capacitance Of A P N Silicon Junction Formed In An N Type Epitaxial Layer Is Shown The Devi 1
2 The Measured Depletion Capacitance Of A P N Silicon Junction Formed In An N Type Epitaxial Layer Is Shown The Devi 1 (16.02 KiB) Viewed 25 times
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2. The measured depletion capacitance of a p-n silicon junction (formed in an n-type epitaxial layer) is shown. The device area is 10-5 cm² and the p*-layer thickness is 0.07 µm. Find the thick- ness of the epitaxial layer. 1/C² 0 0.75×1024 F-2 V(V) 0.95 V
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