Page 1 of 1
An abrupt Si p-n junction with cross-sectional area A = 10-2 cm² has the following properties at 300 K: p side n-side Na
Posted: Fri Apr 29, 2022 10:47 am
by answerhappygod
- An Abrupt Si P N Junction With Cross Sectional Area A 10 2 Cm Has The Following Properties At 300 K P Side N Side Na 1 (221.22 KiB) Viewed 25 times
An abrupt Si p-n junction with cross-sectional area A = 10-2 cm² has the following properties at 300 K: p side n-side Na= 2 x1016 cm Na= 9 x1016 cm3 In = 1 us Tp = 1 us Mlp = 350 cm?/V-s Mn = 900 cm?/V-s Mp = 300 cm?/V-s Min = 500 cm?/V-s (a) What happens to the parameters of p-n junction, including potential barrier height, transition width and electric field, when forward- and reverse-bias voltages are applied, respectively? (b) Assuming that the forward current I of the p-n junction is 0.50 mA, calculate the forward bias V.