(a) A pnp Si bipolar junction transistor (BJT) with the base width of 3 um has the approximate current gain ß of 180. As

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A A Pnp Si Bipolar Junction Transistor Bjt With The Base Width Of 3 Um Has The Approximate Current Gain Ss Of 180 As 1 (687.67 KiB) Viewed 23 times

(a) A pnp Si bipolar junction transistor (BJT) with the base width of 3 um has the approximate current gain ß of 180. Assume that the diffusion coefficient of the holes in the base is 10 cm’s"?. Give the circuit symbol of pnp BJT, and find the life-time of the holes in the base if the emitter injection efficiency is close to unity. (7 marks) (b) Draw the energy band diagram of an ideal metal-oxide-semiconductor (MOS) capacitor in inversion when p-type semiconductor is used as a substrate. Give the name of a two-dimensional (2D) nanomaterial which can be used to replace traditional metal for making atomically thin 2D field-effect transistor (FET). (8 marks) (c) Both BJT in part (a) and FET in part (b) are three-terminal devices. What is the difference at the third terminal? Which type of the two transistors is the basic building block for most integrated circuits (ICs)? (5 marks)