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Problem 1: Consider an ideal pnp bipolar transistor device operating with the following parameters: Emitter Base Collect
Posted: Fri Apr 29, 2022 9:03 am
by answerhappygod
- Problem 1 Consider An Ideal Pnp Bipolar Transistor Device Operating With The Following Parameters Emitter Base Collect 1 (70.16 KiB) Viewed 65 times
Problem 1: Consider an ideal pnp bipolar transistor device operating with the following parameters: Emitter Base Collector nco=4.92e5 /cm3 nco = 2.56 c2/cm3 LE = 22.8e-4 cm DE = 5.18 cm2/sec Pw = 6.39e3 /cm3 LB = 46.9 e-4 cm LC = 39.5e-4 cm DB = 22 cm2/sec DC = 15.6 cm2/sec W = 4e-4 cm = 4 um Ndb = 1.57e16/cm3 Nae = 3.9e17 /cm3 Nac = 2e14 /cm3 Let A=1.265e-4 cm2, ni = 1e10/cm3, KT=.026ev. Calculate the following at Veb=0.67235 and Vcb=-1 volts, assuming that W =4um at these bias voltages. (a) The current components IEn, IEp, and IE b) The current components In, IGp, and IC (C) Ib1 and 1b3, and also what percent of total lb is 1b3? (d) How do the exponential terms containing Veb compare in size with those containing Veb? (e) What is the emitter injection efficiency 0? (1) What is common base current gain Opc? ( What is CE current gain Odc?