In a MOS image sensor containing an array of 3840 by 2160 pixels, each pixel's photodiode has 80% quantum efficiency at

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In A Mos Image Sensor Containing An Array Of 3840 By 2160 Pixels Each Pixel S Photodiode Has 80 Quantum Efficiency At 1 (61.6 KiB) Viewed 19 times

In a MOS image sensor containing an array of 3840 by 2160 pixels, each pixel's photodiode has 80% quantum efficiency at 550nm wavelength and a capacitance of 4 femtofarads. The vertical signal line has a total capacitance of 9 pF. The input resistance of the transversal signal line preamplifier is 1 megaohm. (a) Calculate the noise equivalent bandwidth of the image sensor. [7 marks] (b) Calculate the charge produced by light falling onto the image pixel when it is used to take a photograph with an exposure time of 5ms and there is 200pW of optical power (at 550nm wavelength) incident onto the pixel. [9 marks] (c) Calculate the mean fluctuation in charged introduced by KTC noise at room temperature (300K) during the charge transfer from the pixel to the vertical signal line, and hence the signal to noise ratio in decibels when 200pW optical power (550nm wavelength) falls onto the pixel. [9 marks]