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(3) (25%) n-MOS FET Assume a non-ideal n-MOS FET at room temperature, by assuming Om = 4.28 eV, Noc = 8 x100cm-2. Also s
Posted: Fri Apr 29, 2022 8:46 am
by answerhappygod
- 3 25 N Mos Fet Assume A Non Ideal N Mos Fet At Room Temperature By Assuming Om 4 28 Ev Noc 8 X100cm 2 Also S 1 (35.4 KiB) Viewed 25 times
(3) (25%) n-MOS FET Assume a non-ideal n-MOS FET at room temperature, by assuming Om = 4.28 eV, Noc = 8 x100cm-2. Also suppose that the Vr= +0.80 V, fox = 45 nm. (a) Find the areal capacitance of the oxide Cox. (5%) (b) Find the doping concentration Na. (10%) (c) Find the maximum width of the depletion region W.(5%) (d) Find the maximum space charge Od in the depletion region under the strong inversion. (5%)