(4) (25%) Schottky Diode An ideal Schottky diode is formed on n-type silicon having Na-7x 108 cm at room temperature. Th

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4 25 Schottky Diode An Ideal Schottky Diode Is Formed On N Type Silicon Having Na 7x 108 Cm At Room Temperature Th 1 (58.64 KiB) Viewed 24 times

(4) (25%) Schottky Diode An ideal Schottky diode is formed on n-type silicon having Na-7x 108 cm at room temperature. The metal electrode has a work function of 4.68 eV, and the electron affinity of silicon is 4.01 eV. (a) Find the Fermi level Ef against Ec at room temperature. (5%) (b) Find the Schottky barrier at room temperature. (5%) (c) Find the built-in voltage Vi in the semiconductor side. (5%) (d) Find the depletion width W when V=0.(5%) (e) Find the maximum electrical field 1&max) in the semiconductor when V=0.(5%) (Hint: you may sketch an energy diagram to show your answer).