(1) A silicon p-n-p transistor has impurity concentrations of 10", 10", and 1096 cm in the emitter, base, and collector,

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(1) A silicon p-n-p transistor has impurity concentrations of 10", 10", and 1096 cm in the emitter, base, and collector,

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1 A Silicon P N P Transistor Has Impurity Concentrations Of 10 10 And 1096 Cm In The Emitter Base And Collector 1
1 A Silicon P N P Transistor Has Impurity Concentrations Of 10 10 And 1096 Cm In The Emitter Base And Collector 1 (39.34 KiB) Viewed 19 times
(1) A silicon p-n-p transistor has impurity concentrations of 10", 10", and 1096 cm in the emitter, base, and collector, respectively. The base width is 1.0 pm. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate (a) the neutral base width and (b) the minority carrier concentration at the emitter-base junction. --- 15 marks (2) How to design a good BJT device? --- 10 marks
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