If there is an organic solid in the sputtering method when forming a thin film in a semiconductor, why is the ion beambo
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If there is an organic solid in the sputtering method when forming a thin film in a semiconductor, why is the ion beambo
If there is an organic solid in the sputtering method when forming a thin film in a semiconductor, why is the ion beamboard inhibited? And why is that a disadvantage of sputtering?
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