In an optical proximity printing system, briefly discuss how resolution can change with resist thickness. For an exposur
Posted: Sun Jul 17, 2022 7:57 pm
In an optical proximity printing system, briefly discuss how resolution can change with resist thickness. For an exposure, the mask to wafer separation is 10 um and g-line exposure is used, what is the variation in resolution when a process using a 0.5 um-thick resist is changed to one using 2.5 um-thick resist? Assume k = 0.8.