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1. Find values of the intrinsic carrier concentration n, for silicon at -50°C, 0°C and 50°C. 2. In a phosphorus-doped silicon layer with impurity concentration of 10"/cm", find the hole and electron concentrations at 300 K. Is the material n-type or p-type? 3. Calculate the built-in potential barrier voltage of a junction in which the p and n regions are doped equally with 5 x 1016 atoms/cm². Also, find the zero biased Junction capacitance, If the junction capacitance is 1 pF, when a 3 V reverse blas voltage is applied across the Junction. 4. A drift current density of 120 A/cm2 is established in n-type silicon with an applied electric field of 18 V/cm. If the electron and hole mobilities are un = 1250 cm'/V-s and Hp = 450 cmN-s, respectively, determine the required doping concentration. Note: k = 86 x 10-6 eV/K, Eg = 1.1 eV and B = 5.23 x 104 cm K-3/2 for silicon, n = 1.5 x 101/cm for silicon at 300 K, and V1 = 0.026 V at 300 K.