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c) A level 200 engineering student took a critical fook to analyze the sketch with his basic understanding from semiconductors of a bipolar junction transistor diagram depicted below. Now, considering the circuit diagram shown below. Determine (Assume o =150 ) i. Base curnent ( Li) and Gollector Gurrent (i) ii. Emitter Curtent ( ) and Emitten-Base voliage (HE​) The Shockley dio de equation relates the current flowing through a diode, lo to the Where Ib​ and VD​ have positive sign for forward diode bias Is is the saturation current q is the charge on electron; q=1.602×10−19C,Kn​ is the Boltzmann's constant; xp​=138=10−n1K′′, ris the temperature in Kelvins and may be taken to be 300 K d) Calculate the value at room temperature. Hence explain the Shockley diode equation may be approximated to be ID​=Is​(eqV2/k,r) at room temperature in forward bias. (Hint: the units aKB​T​ are in volts)