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Σ The very long silicon bar sample doped 10^(16)cm^(-3) with phosphorus was continuously irradiated with light, so that the electron hole pair generated 10^(20)[EHP/cm^(-3)-s) per second. The time constant of the To=T, = 10+5 P electron and the hole is and и =1345 cm-/V -s 11o = 458 cm/v-s n = 1.5x100cm T= 300 K 2 (a) Find the carrier concentration no, po in thermal equilibrium. (b) Assuming a low level of excitation, the recombination factor ar=? (c) The excess carrier concentration in under steady state condition on, õp = ? (Use the given conditions gop and ar, the lifetime of electrons and holes, etc. to obtain the correct value) [Assume the low-level ar doesn't change for high-level injection.] (d) Find np product (A) in thermal equilibrium and np product (B) in non-equilibrium state (e) Find the Fermi level and EF-Ei values in thermal equilibrium and indicate their location and values in the Energy band diagram. (f) Find the Quasi Permi level, Fn-Ei value, and indicate its location and value in the Energy band diagram. (9) Find the Quasi Permi level, Ei-Fp value, and indicate its location and value in the Energy band diagram. (Draw e f g in one picture.) (h) A hole is a minority carrier. Find the diffusion length of the hole.