Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron aff
Posted: Thu Jul 14, 2022 11:26 am
a) -0.8eV
b) 0.8eV
c) 0.9eV
d) -0.9eV
b) 0.8eV
c) 0.9eV
d) -0.9eV
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