Answer Happy

please I need an answer to all the multiple
questions below from 1 to 5
1) The bandgap of silicon is 1.12 eV. If the N-side of an NP junction is doped so that Er = E, and the P-side so that EF = E,, then what is the built-in potential of the NP junction? = a) 1.12 eV b) 0.56 eV c) 1.12 V d) 0.56 V e) OV Which po 2) We write the equilibrium minority electron concentration on the P-side as n of the following is true? оо a) n,o=n 'po Ob) n.o = NA = po O "po =n? "po=n}/n, mpo = Nz/n, = Which of 3) We write the equilibrium majority hole concentration on the P-side as Ppo · the following is true? A a) Ppo = n; b Рpo = N OC Ppo =n}/N, Po=n? Ppo = Nz/n
Lecture 5.4 Quiz (continued): 4) If, at a given forward bias, we desire to suppress the electron diffusion current injected into a P-type region, which of the following would NOT work? OOOOO a) Increase the doping density of the P-type region b) Increase the thickness of the P-type region c) Increase the bandgap of the P-type region d) Decrease the temperature e) Decrease the doping density of the N-type region 5) If we desire to increase the electron injection efficiency of an NP junction, y = 1./(1,+Jo), which of the following would NOT work? ООООО O a) Decrease the doping density of the N-type region b) Increase the bandgap of the N-type region c) Decrease the thickness of the P-type region d) Decrease the doping density of the P-type region e) Decrease the bandgap of the P-type region