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Linear Electronics: Assignment Sketch the atomic structure of copper and discuss why it is a good conduct and how is Structure is different from that of germanium, silicon, and gallium arsenide In your own words, define an intrinsie material, a negative tempercent, and covalent bonding Consult your reference library and list the materials that have a negative temperature coefficient and three that have a positive temperature coefficient 2. How much energy in joules is required to move a charge of 12 Chrough a differenties potential of 6 V? For part), find the energy in electronvolts 1. 1848 eV of energy is required to tave a charge through a potential difference of 32V, determine the charge involved 4. Consult your reference library and determine the level of Energy for GoP.ZS. and GAP three semiconductor materials of practical value. In addition, determine the time name for each material 5. Describe the difference between n-type and p-type semiconductor materials Describe the difference between donor and acceptor impurities 6. Describe the difference between majority and minority carriers 7. Sketch the atomic structure of silicon and insert an impurity of ansenic & Consult your reference library and find another explanation of hele verses clef 9. Using both descripcions, describe in your own words the process of hole candection 10. Describe in your own words the conditions established by forward and reverse-bis condities on a p-n junction diode and how the resulting current is affected. II. Describe how you will remember the forwand- and reverse his states of the pajunction code That is, www will you remember which potential positive or negative) is applied to which terminal 12. Determine the thermal voltage for a diode ata temperature of 20°C 13. Given a diode current of mA and I find is in the applied voltage is SV and the temperature is room temperature ( 20) 14. Given a diode current of 6 mA, VT-36 mV. n=1 and L. - In, find the applied voltage V